description: the central semiconductor cmut3904, CMUT3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in an ultramini? surface mount package, designed for small signal general purpose amplifier and switching applications. marking code for cmut3904 is ac1. marking code for CMUT3906 is ac2. cmut3904 npn CMUT3906 pnp ultramini?surface mount complementary silicon transistors sot-523 case central semiconductor corp. tm r0 ( 30-may 2001) maximum ratings: (t a =25c) symbol cmut3904 CMUT3906 units collector-base voltage v cbo 60 40 v collector-emitter voltage v ceo 40 40 v emitter-base voltage v ebo 6.0 5.0 v collector current i c 200 ma power dissipation p d 250 mw operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 500 c/w electrical characteristics: (t a =25c unless otherwise noted) cmut3904 CMUT3906 symbol test conditions min max min max units i cev v ce =30v, v eb =3.0v 50 50 na bv cbo i c =10 a6040v bv ceo i c =1.0ma 40 40 v bv ebo i e =10 a 6.0 5.0 v v ce(sat) i c =10ma, i b =1.0ma 0.20 0.25 v v ce(sat) i c =50ma, i b =5.0ma 0.30 0.40 v v be(sat) i c =10ma, i b =1.0ma 0.65 0.85 0.65 0.85 v v be(sat) i c =50ma, i b =5.0ma 0.95 0.95 v h fe v ce =1.0v, i c =0.1ma 40 60 h fe v ce =1.0v, i c =1.0ma 70 80 h fe v ce =1.0v, i c =10ma 100 300 100 300 h fe v ce =1.0v, i c =50ma 60 60 h fe v ce =1.0v, i c =100ma 30 30
central semiconductor corp. tm mechanical outline - sot-523 cmut3904 npn CMUT3906 pnp ultramini?surface mount complementary silicon transistors bottom view i h g f e d c a r1 12 3 b r0 ( 30-may 2001) electrical characteristics: continued cmut3904 CMUT3906 symbol test conditions min max min max units f t v ce =20v, i c =10ma, f=100mhz 300 250 mhz c ob v cb =5.0v, i e =0, f=1.0mhz 4.0 4.5 pf c ib v be =0.5v, i c =0, f=1.0mhz 8.0 10 pf h ie v ce =10v, i c =1.0ma, f=1.0khz 1.0 10 2.0 12 k ? h re v ce =10v, i c =1.0ma, f=1.0khz 0.5 8.0 0.1 10 x10 -4 h fe v ce =10v, i c =1.0ma, f=1.0khz 100 400 100 400 h oe v ce =10v, i c =1.0ma, f=1.0khz 1.0 40 3.0 60 mhos nf v ce =5.0v, i c =100 a, r s =1.0k ? f=10hz to 15.7khz 5.0 4.0 db t d v cc =3.0v, v be =0.5v, i c =10ma, i b1 =1.0ma 35 35 ns t r v cc =3.0v, v be =0.5v, i c =10ma, i b1 =1.0ma 35 35 ns t s v cc =3.0v, i c =10ma, i b1 =i b2 =1.0ma 200 225 ns t f v cc =3.0v, i c =10ma, i b1 =i b2 =1.0ma 50 75 ns lead code: 1) base 2) emitter 3) collector
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